PETRA

The aim of the proposed research is threefold: 1) to exploit an innovative and very versatile pulsed electron deposition technique, namely the so-called ionized jet deposition (IJD), to grow thin films based on nanostructured lowD TMDs which will be uniform over large scales, but which preserve the unique optoelectronic properties of few-layered TMDs; 2) to provide straightforward doping methods during growth, either of n- or p- type, to tailor the electrical properties of the films for application in devices; 3) to monitor significant chemical and/or structural changes and in any case the modification of any electronic and optical property during device
operation to offer suitable feedback to optimize growth protocols and to understand working mechanisms.