2D Integrate

In the last decade, the availability of two dimensional materials (2DM) with different electronic properties (e.g. semimetallic graphene, semiconducting MoS₂ and insulating h-BN) has inspired worldwide efforts to integrate distinct 2D layers into van der Waals (vdW) heterostructures.  Several pioneering works have been focused on the demonstration of all-2D van der Waals (vdW) heterostructures and on 2DM integration with bulk semiconductors, with the aim of combining the functional properties of 2DM with the well-assessed electronic quality of semiconductor substrates. 

Among the state of the art semiconductors, group III-Nitrides (III-N), including GaN, AlN and their alloys, play a crucial role in optoelectronics (LEDs, lasers) and in high frequency electronics, due to their outstanding physical properties, such as the direct energy bandgap (tunable from 3.4 to 6.2 eV) and the high mobility 2D electron gas (2DEG) of AlGaN/GaN heterojunctions. AlGaN/GaN high electron mobility transistors (HEMTs), capable of working at frequencies from tens to hundreds of GHz, represent the basis of the 5G technology. On the other hand, there is a strong need of solid state-devices able to amplify electric signals at frequencies above 1 THz, as the access in this frequency range would have tremendous impact in many strategic fields, like telecommunications, homeland security, medical diagnostics.

The general aim of the 2DIntegratE project is the development, characterization and modelling of 2D materials (2DM) heterostructures with group III Nitride semiconductors (III-N) as a platform for advanced electronic applications. 

More in details, the specific objectives of the project will be: 

O1: Integration of 2DM with III-N and tailoring the interface electronic properties playing on different factors (doping, strain, layers number of the 2DM).

O2: Understanding the structural/chemical properties of the 2DM/III-N heterostructures and their correlation with the mechanisms of current transport at the interfaces. 

O3: Demonstration and electrical/optical characterization of heterojunction diodes, based on current transport across the ultra-sharp junctions between Gr or MoS₂ and GaN or AlGaN/GaN heterostructures. Thanks to the combination of the wide bandgap of III-N alloys, the high mobility 2DEGs of Gr and AlGaN/GaN interface, and the ballistic electronic transport across the atomically thin Gr and MoS₂ layers, these devices are expected to operate at ultra-high frequencies (THz) with extremely low-power dissipation, meeting the demand of energy efficiency from the EU Green Deal.

 Thanks to the combination of the wide bandgap of III-N alloys, the high mobility two-dimensional electron gas of graphene and AlGaN/GaN, and the ballistic electronic transport across the atomically thin graphene and MoS₂ layers, these devices are expected to operate at ultra-high frequencies (THz) with extremely low-power dissipation, meeting the demand of energy efficiency from the EU Green Deal.

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Finanziato dall’Unione europea – Next Generation EU